Bibliography

Journal Articles

  1. U. Olin and O. Sahlen, “Transverse effects in switching of bistable Fabry-Perot étalons filled with a saturable medium,” Journal of the Optical Society of America B, vol. 4, no. 3, pp. 319–323, Mar. 1987.
  2. O. Sahlen, U. Olin, E. Masseboeuf, G. Landgren, and M. Rask, “Optical bistability and gating in metalorganic vapor phase epitaxy grown GaAs étalons operating in reflection,” Appl. Phys. Lett., vol. 50, no. 2, pp. 1559–1561, Jun. 1987.
  3. U. Olin, “Effects of diffraction and diffusion in dispersive optical bistability in Fabry-Perot étalons,” Journal of the Optical Society of America B, vol. 5, no. 1, pp. 20–23, Jan. 1988.
  4. O. Sahlen, U. Ohlander, and U. Olin, “Improved performance of bistable CdSe filnters,” Journal de Physique, vol. 49, no. 6, pp. C2–127–130, Jun. 1988.
  5. O. Sahlen, U. Olin, G. Landgren, and M. Rask, “Subnanosecond absorptive switching in GaAs etalons,” Journal de Physique, vol. 49, no. 6, pp. C2–197–200, Jun. 1988.
  6. E. Masseboeuf, O. Sahlen, U. Olin, N. Nordell, M. Rask, and G. Landgren, “Low-power optical bistability in a thermally stable AlGaAs étalon,” Appl. Phys. Lett., vol. 54, no. 2, pp. 2290–2292, Jun. 1989.
  7. U. Olin and O. Sahlen, “Theory for the temperature rise in optically bistable GaAs/AlGaAs étalons including diffraction, heat conduction, and carrier diffusion,” Optics Letters, vol. 14, no. 1, pp. 566–568, Jun. 1989.
  8. U. Olin, “Model for optical bistability in GaAs/AlGaAs Fabry—Perot étalons including diffraction, carrier diffusion, and heat conduction,” JOSA B, vol. 7, no. 1, pp. 35–42, Jan. 1990.
  9. S. Marcinkevicius, U. Olin, M. Ottosson, G. Treideris, I. Šimkiene, and T. Lideikis, “Stark shift of the interband transitions in asymmetric step InGaAs/GaAs quantum wells,” J. Appl. Phys., vol. 73, no. 9, pp. 4691–4693, May 1993.
  10. S. Marcinkevicius, U. Olin, and G. Treideris, “Room temperature carrier recombination in InGaAs/GaAs quantum wells,” J. Appl. Phys., vol. 74, no. 5, pp. 3587–3589, Sep. 1993.
  11. J. Kavaliauskas, G. Krivaite, T. Lideikis, I. Šimkiene, G. Treideris, U. Olin, and M. Ottosson, “Electroreflectance studies of InGaAs/GaAs asymmetric step quantum wells,” Semiconductor Science and Technology, vol. 8, no. 1, pp. 1875–1880, Oct. 1993.
  12. K. Fröjdh, U. Olin, and R. Planel, “Space charge effects on interband optical nonlinearities in asymmetric coupled quantum wells,” Journal de Physique IV, vol. 3, no. 5, pp. 233–236, Oct. 1993.
  13. K. Fröjdh, U. Olin, and R. Planel, “Space-charge-induced interband optical nonlinearities in asymmetric coupled quantum wells,” Optical and quantum electronics, vol. 26, no. 5, pp. S565–S569, May 1994.
  14. S. Marcinkevicius and U. Olin, “Different carrier temperatures in the wells and in the barriers of InGaAs/GaAs single quantum well structures,” Semiconductor Science and Technology, vol. 9, no. 5, pp. 756–758, May 1994.
  15. A. Krotkus, S. Marcinkevicius, V. Pasiskevicius, and U. Olin, “Ultrafast photoluminescence decay in low-temperature MOCVD-grown InxGa1-xAs,” Semiconductor Science and Technology, vol. 9, no. 7, pp. 1382–1386, Jul. 1994.
  16. S. Marcinkevicius, U. Olin, J. Wallin, K. Streubel, and G. Landgren, “Photoexcited carrier transport in InGaAsP/InP quantum well laser structure,” Appl. Phys. Lett., vol. 65, no. 1, pp. 2057–2059, Oct. 1994.
  17. A. Krotkus, R. Viselga, K. Bertulis, V. Jasutis, S. Marcinkevicius, and U. Olin, “Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature,” Appl. Phys. Lett., vol. 66, no. 1, pp. 1939–1941, Apr. 1995.
  18. S. Marcinkevicius, U. Olin, J. Wallin, K. Streubel, and G. Landgren, “Femtosecond electron transport in quantum well laser structures with step-graded confinement layers,” Appl. Phys. Lett., vol. 66, no. 1, pp. 2098–2100, Apr. 1995.
  19. S. Marcinkevicius, U. Olin, J. Wallin, and G. Landgren, “Electron relaxation and capture in InGaAsP quantum well laser structures,” Applied Physics Letters (ISSN 0003-6951), vol. 66, pp. 3164–3166, Jun. 1995.
  20. S. Marcinkevicius, U. Olin, C. Silvenius, B. Stålnacke, J. Wallin, and G. Landgren, “Time-resolved spectroscopy of carrier transport in InGaAsP quantum well laser structures,” Lithuanian Journal of Physics, vol. 35, pp. 377–381, Sep. 1995.
  21. J. Kavaliauskas, G. Krivaite, A. Galickas, I. Šimkiene, U. Olin, and M. Ottosson, “Quantum Confined Stark Effect in InGaAs/GaAs Quantum Wells under High Electric Fields,” Physica Status Solidi (B), vol. 191, pp. 155–159, Sep. 1995.
  22. S. Marcinkevicius, H. Hillmer, R. Lösch, and U. Olin, “Photoexcited carrier dynamics in InAlGaAs/InP quantum well laser structures,” Appl. Phys. Lett., vol. 69, no. 8, pp. 1101–1103, Aug. 1996.
  23. K. Fröjdh, S. Marcinkevicius, U. Olin, C. Silfvenius, B. Stålnacke, and G. Landgren, “Interwell carrier transport in InGaAsP multiple quantum well laser structures,” Appl. Phys. Lett., vol. 69, no. 2, pp. 3695–3697, Dec. 1996.
  24. S. Marcinkevicius, A. Krotkus, R. Viselga, U. Olin, and C. Jagadish, “Non-thermal photoexcited electron distributions in non-stoichiometric GaAs,” Semiconductor Science and Technology, vol. 12, no. 4, pp. 396–400, Apr. 1997.
  25. S. Marcinkeviius, H. Hillmer, R. Lösch, K. Fröjdh, and U. Olin, “Interwell Carrier Distribution in InAlGaAs Quantum Well Laser Structures,” Physica Status Solidi (B), vol. 204, no. 1, pp. 577–580, Nov. 1997.
  26. N. Tessler, S. Marcinkevicius, U. Olin, C. K. V. Silfvenius, B. F. Stalnacke, and G. Landgren, “Vertical carrier transport in InGaAsP multiple-quantum-well laser structures: effect of p-doping,” Selected Topics in Quantum Electronics, IEEE Journal of, vol. 3, no. 2, pp. 315–319, 1997.
  27. S. Marcinkeviius, K. Fröjdh, H. Hillmer, R. Lösch, and U. Olin, “Vertical carrier transport in InP-based quantum well laser structures,” Materials Science and Engineering B, vol. 51, no. 1, pp. 30–33, Feb. 1998.
  28. A. Krotkus, K. Bertulis, L. Dapkus, U. Olin, and S. Marcinkevicius, “Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs,” Appl. Phys. Lett., vol. 75, no. 21, p. 3336, 1999.

Conference Papers

  1. U. Olin and O. Sahlén, “The role of focussing for a bistable Fabry-Perot étaon with a local saturable nonlinearity,” in Proceedings from the International Optical Computing Conference, Jerusalem, Israel, 1986.
  2. U. Olin and O. Sahlén, “Optical bistability and switching in GaAs and AlGaAs étalons operating in reflection,” in International summer school on Optical Computing, Edinburgh, Scotland, 1988.
  3. M. Rask, N. Nordell, G. Landgren, O. Sahlén, U. Olin, and E. Masseboeuf, “Optical bistability and switching in GaAs Fabry-Perot étalons grown by MOVPE,” in European Workshop on MOVPE-II, St. Andrews, Scotland, 1988.
  4. O. Sahlén, U. Olin, G. Landgren, and M. Rask, “Fast optical absorptive switching in GaAs étalons operating in reflection,” in Proceedings from the 13th Nordic Semiconductor conference, Saltsjöbaden, Sweden, 1988.
  5. E. Masseboeuf, O. Sahlén, U. Olin, N. Nordell, M. Rask, and G. Landgren, “Thermally stable optically bistable AlGaAs etalons,” in Workshop Optical Information Technology, Toulouse, France, 1989.
  6. E. Masseboeuf, O. Sahlen, U. Olin, N. Nordell, M. Rask, and G. Landgren, “Thermally stable, optically bistable AlGaAs étalon with a silver combined mirror and heat sink,” in Proceedings of Topical Meeting on Photonic Switching, Washington, D.C., 1989, p. PD2.
  7. U. Olin and O. Sahlén, “Modelling of optical bistability in reflection in GaAs/AlGaAs Fabry-Perot étalons, including diffraction, carrier and heat diffusion,” in Conference on Lasers and Electro-Optics, Baltimore, Maryland, 1989 Technical Digest Series, Vol. 11, p. 94, 1989.
  8. O. Sahlen, U. Öhlander, U. Olin, P. Blixt, E. Masseboeuf, G. Landgren, M. Rask, and N. Nordell, “Bistability in semiconductor etalons and lasers,” in Proc. SPIE, 5th European Conf on Integrated Optics: ECIO ’89, 1989, vol. 1141, pp. 112–110.
  9. O. Sahlén, L. Thylén, A. Karlsson, and U. Olin, “Bandfilling or Stark effect for photonic switching – a comparison,” in Photonic Switching II. Proceedings of the International Topical Meeting, edited by K. Tada and H. S. Hinton (Springer-Verlag, Berlin, Germany) pp.42-45, 1990.
  10. U. Olin, “Electroabsorptive/-refractive effects in asymmetric step quantum wells and BRAQWET structures,” in Workshop on Optical Information Technology, Heriot-Watt University, Edinburgh, 1991.
  11. U. Olin and C. Looström, “Barrier reservoir and quantum well electron transfer (BRAQWET) structures with multiple quantum wells per period,” in Conference on Lasers and Electro-Optics 1992, OSA Technical Digest Series 1992, Vol. 12, pp. 470-472, 1992.
  12. S. Marcinkevicius and U. Olin, “Different carrier temperature in the wells and in the barriers of InGaAs/GaAs single quantum well structures,” in 8th International Conference on Hot Carriers in Semiconductors, 1993.
  13. S. Marcinkevicius and U. Olin, “Photoluminescence study of carrier recombination in InGaAs/GaAs quantum wells at room temperature,” in Proceedings of the 1993 International Conference on Luminescence (University of Connecticut, Storrs, CT, USA), p. Th4-21, 1993.
  14. S. Marcinkevicius, U. Olin, K. Fröjdh, J. Wallin, and G. Landgren, “Carrier transport in 1.5 μm quantum well laser structures,” in Ultrafast Phenomena IX, edited by P. F. Barbara, W. Knox, G. A. Mourou, and A. H. Zewail (Springer-Verlag, Berlin Heidelberg), pp. 368-269, 1994.
  15. S. Marcinkevicius and U. Olin, “Thermalization between 2-D and 3-D carriers in InGaAs/GaAs quantum well structures,” in International Quantum Electronics Conference. 1994 OSA Technical Digest Series, Vol. 9 (Optical Society of America, Washington, D.C.), p. 112, 1994.
  16. S. Marcinkevicius, U. Olin, K. Fröjdh, J. Wallin, and G. Landgren, “Photoexcited carrier transport in lnGaAsP/ InP quantum well laser structures,” in Lasers and Electro-Optics Europe, 1994 Conference on, Vol. 1, (IEEE, Piscataway, NJ, USA), p. 366, 1994.
  17. S. Marcinkevicius, U. Olin, K. Fröjdh, J. Wallin, and G. Landgren, “Photoexcited carrier transport in InGaAsP/InP graded-index separate-confinement heterostructure quantum well lasers,” in Phasdom 94 – PHANTOMS Workshop (Trinity College, Dublin) 1994.
  18. S. Marcinkevicius, U. Olin, C. Silfvenius, B. Stålnacke, J. Wallin, and G. Landgren, “Time-resolved spectroscopy of carrier transfer in InGaAsP quantum well lasers,” in Optik i Sverige 1995, 1995.
  19. S. Marcinkevicius, U. Olin, C. Silfvenius, B. Stålnacke, and G. Landgren, “Carrier transport in multiple quantum well regions of InGaAsP/InP structures,” in Ultrafast processes in spectroscopy, edited by S. De Silvestri (International Centre for Theoretical Physics, Trieste, Italy), 1995.
  20. S. Marcinkevicius, U. Olin, J. Wallin, K. Streubel, and G. Landgren, “Ambipolar and electroni transport in quantum well laser structures with step-graded confinement layers,” in CLEO’95, Conference on Lasers and Electro-Optics, Baltimore, Md, USA (Optical Society of America, Washington, D.C., USA), pp. 280-281, 1995.
  21. S. Marcinkevicius, U. Olin, C. Silfvenius, B. Stålnacke, J. Wallin, and G. Landgren, “Photoluminescence study of carrier transport in InGaAsP quantum well laser structures,” in 19th Workshop on Compound Semiconductor Devices and Integrated Circuits (Ericsson Components AB, Stockholm), 1995.
  22. S. Marcinkevicius, U. Olin, C. Silvenius, B. Stålnacke, J. Wallin, and G. Landgren, “Time-resolved spectroscopy of carrier transport in InGaAsP quantum well laser structures,” in 9th Symposium on Ultrafast Phenomena in Semiconductors, Vilnius, Lithuania, 1995.
  23. U. Olin, D. Varga, K. Fröjdh, J. Wallin, G. Landgren, and R. Hainzl, “Low-voltage electroabsorption in InGaAsP/InP multiple-quantum -well electron transfer structures,” in Optik i Sverige, 1995.
  24. U. Olin, D. Varga, K. Fröjdh, J. Wallin, And G. Landgren, “Low-voltage electroabsorption in InGaAsP/InP multiple-quantum-well electron transfer structures,” in Photonics in Switching, (Optical Society of America, Washington D. C.), pp. 98-100, 1995.
  25. U. Olin, “Carrier dynamics in multiple quantum well laser structures,” in Ultrafast dynamical processes in dense media, 1995.
  26. J. Kavaliauskas, G. Krivaite, A. Galickas, I. Simkiene, U. Olin, and M. Ottosson, “Exciton Stark shifts and linewidth broadening in InGaAs/GaAs asymmetric step quantum wells,” in WOCSDICE ’96, 1996.
  27. S. Marcinkevicius, N. Tessler, U. Olin, C. Silfvenius, B. Stålnacke, and G. Landgren, “Carrier transport in multiple quantum well region of InGaAsP/InP structures,” in Ultrafast processes in spectroscopy, edited by O. Svelto, S. De Silvestri, and G. Denardo (Plenum Press, New York, USA), pp. 229-232, 1996.
  28. S. Marcinkevicius, L. H. Hillmer, R. Lösch, and U. Olin, “Carrier Dynamics in 1.55 µm InAlGaAs Quantum Well Laser Structures,” in Lasers and Electro-optics Europe, 1996. CLEO/Europe., Conference on, (IEEE, Piscataway, NJ, USA), 1996, p. 81.
  29. S. Marcinkevitius, K. Fröjdh, and U. Olin, “Interwell Carrier Transport in InGaAsP/InP Quantum Well Laser Structures,” in Lasers and Electro-optics Europe, 1996. CLEO/Europe., Conference on, (IEEE, Piscataway, NJ, USA), 1996, p. 263.
  30. S. Marcinkevicius, U. Olin, C. Silfvenius, B. Stålnacke, J. Wallin, and G. Landgren, “Electron transport in InGaAsP/InP quantum well laser structures,” in Proceedings of Hot Carriers in Semiconductors, edited by K. Hess, J.-P. Leburton, and U. Ravaioli (Plenum Press, New York, NY, USA), pp. 575-578, 1996.
  31. S. Marcinkevicius, A. Krotkus, R. Viselga, and U. Olin, “Shorter than 100 fs carrier lifetimes in as-grown by low temperature MBE GaAs,” in Ultrafast processes in spectroscopy, edited by O. Svelto, S. De Silvestri, and G. Denardo (Plenum Press, New York, USA), pp. 207-210, 1996.

Conference Proceedings

  1. U. Olin and K. Biedermann, Eds. Optik i Sverige 1998 : Optics in Sweden 1998. Stockholm: The Swedish Optical Society, 1998.
  2. K. Biedermann and U. Olin, Eds. Northern optics 2000 and EOSAM 2000. 2000, p. 261.
  3. K. Biedermann and U. Olin, Eds. Optik i Sverige 2001: Optics in Sweden 2001: Summaries of Contributions to the Conference of the Swedish Optical Society, Held in Stockholm 8 November 2001. Swedish Optical Society, 2001, p. 77.

Patents

  1. A. Henriksson, U. Öhlander, B. Sahlgren, and U. Olin, “Wavelength selective optical device,” WO02103447.
  2. B. Sahlgren, A. Asseh, A. Henriksson, R. Stubbe, U. Öhlander, U. Olin, S. Karlsson, F. Jonsson, and S. Helmfrid, “Wavelength selective switch,” Swedish patent application, SE 0202160-8, 2002.
  3. A. Henriksson, F. Jonsson, S. Karlsson, and U. Olin, “Wavelength selective device,” EP 1690 118 B1.

Reports

  1. U. Olin, “Calculation of resonant optical nonlinearities in semiconductors using the theory of Banyai and Koch,” TR 207, (Institute of Optical Research, Stockholm), 1989.
  2. M. Ottosson and U. Olin, “Quantum confined Stark effect in asymmetric single-stepped AlxGa1-xAs/GaAs quantum wells,” TR 256, (Institute of Optical Research, Stockholm), 1992.
  3. U. Olin, R. Hainzl, and K. Fröjdh, “Evaluation of superlattice structures for high-speed electroabsorption modulators,” TR 294 (Institute of Optical Research, Stockholm), 1995.
  4. K. Fröjdh, P. Holmström, and U. Olin, “Simulation of optoelectronic semiconductor structures,” TR 310 (institute of Optical Research, Stockholm), 1996.
  5. M. Jonsson and U. Olin, “Optical interconnection technology in switches, routers and optical cross connects,” Ericsson Radio Systems AB, Stockholm, Sweden, ERA/X/L-00:027 Uen, Oct. 2000.

Magazine Articles

  1. U. Olin and S. Sandgren, “Optical-layer monitoring safeguards fiberoptic networks,” Laser focus world, vol. 38, no. 6, Pennwell, pp. 149–155, 2002.
  2. U. Olin and U. Öhlander, “Monitoring dynamic optical networks,” Lightwave, April 12, 2002.

Thesis

  1. U. Olin, “Numerical solution of the wave equation of an optically bistable Fabry-Perot interferometer,” MSc Thesis, (Royal Institute of Technology, Stockholm), 1985.
  2. U. Olin, Modelling of optical bistability in semiconductor fabry-perot etalons, Stockholm: PhD Thesis, (Royal Institute of Technology, Stockholm), 1990.